AH115
Product Features
x
1800 – 2300 MHz
x
+28.5 dBm P1dB
x
+44 dBm Output IP3
x
14 dB Gain @ 1960 MHz
x
+5V Single Positive Supply
x
MTTF > 100 Years
The Communications Edge
TM
Product Information
�½ Watt, High Linearity InGaP HBT Amplifier
Product Description
The AH115 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrow-band
tuned application circuits with up to +44 dBm OIP3 and
+28.5 dBm of compressed 1-dB power. All devices are
100% RF and DC tested. The AH115 is available in lead-
free/green/RoHS-compliant SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 to maintain high linearity over temperature and
operate directly off a +5 V supply. This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
1
8
7
6
5
2
3
4
x
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x
Final stage amplifiers for Repeaters
x
Mobile Infrastructure
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(4)
Min
1800
12.5
2140
14.4
23
8
+28.5
+42
+22.5
+20
200
5.3
250
+5
300
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Typ
Max
2300
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
@ -45 dBc ACLR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
14.3
-12
-8
+28.3
+44
+22.5
+20
5
5.3
+5 V @ 250 mA
¡
+26.5
+41
2140
14.4
-23
-8
+28.5
+42
wCDMA Channel Power
Noise Figure
Supply Bias
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
(3)
Device Voltage
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Parameter
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
-40 to +85
qC
-65 to +150
qC
+22 dBm
+8 V
400 mA
2W
+250
qC
Rating
Ordering Information
Part No.
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
Description
1960 MHz Evaluation Board
2140 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
�½ Watt, High Linearity InGaP HBT Amplifier
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5
April 2006
WJCI [ WJ COMMUNICATION. INC. ]
