AH215
Product Features
•
400 – 2300 MHz
•
+31.5 dBm P1dB
•
+46 dBm Output IP3
•
18 dB Gain @ 900 MHz
•
+5V Single Positive Supply
•
MTTF > 100 Years
The Communications Edge
TM
Product Information
1 Watt, High Linearity InGaP HBT Amplifier
Product Description
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve superior performance for various
narrowband-tuned application circuits with up to +46 dBm
OIP3 and +31.5 dBm of compressed 1-dB power. The part
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
Functional Diagram
1
8
2
7
3
6
4
5
•
Lead-free/green/RoHS-compliant
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
SOIC-8 SMT Pkg.
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
linearity over temperature and operate directly off a +5 V
supply.
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
Typical Performance
(4)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
400
10
2140
11
18
8
+31.5
+45
6.3
+25.5
+23
400
450
5
500
Typ
Max
2300
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
7.0
900
18
-13
-7
+31
+46
+25.5
Typical
1960
12
-11
-10
+32
+46
+25.5
+23
5.5
6.2
+5 V @ 450 mA
2140
11
-18
-8
+31.5
+45
+29
+43.8
wCDMA Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Noise Figure
Supply Bias
Operating Current Range , Icc
Device Voltage, Vcc
(3)
mA
V
4. Typical parameters reflect performance in a tuned application circuit at +25
°C.
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51
Ω.
(ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
-40 to +85
°C
-65 to +150
°C
+26 dBm
+8 V
900 mA
5W
+250
°C
Rating
Ordering Information
Part No.
AH215-S8G
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
Description
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 7 September 2005
WJCI [ WJ COMMUNICATION. INC. ]
