AH312
Product Features
•
400 – 2300 MHz
•
+33 dBm P1dB
•
+51 dBm Output IP3
•
18 dB Gain @ 900 MHz
•
+5V Single Positive Supply
•
MTTF > 100 Years
The Communications Edge
TM
Product Information
2 Watt, High Linearity InGaP HBT Amplifier
Product Description
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +49 dBm OIP3 and
+33 dBm of compressed 1dB power. It is housed in a lead-
free/green/RoHS-compliant SOIC-8 package. All devices are
100% RF and DC tested.
The AH312 is targeted for use as a driver amplifier in
Functional Diagram
1
8
2
7
3
6
4
5
•
Lead-free/green/RoHS-compliant
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
SOIC-8 SMT Pkg.
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(4)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
700
400
9
2140
10
20
6.8
+33.2
+48
+27.5
+25.3
7.7
800
+5
900
Typ
Max
2300
Parameter
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
8.0
900
18
-18
-11
+33
+49
+27
Typical
1960
11
-19
-6.8
+33.4
+51
+27.5
+25.3
7.3
7.7
+5 V @ 800 mA
2140
10
-20
-6.8
+33.2
+48
+32
+47
wCDMA Channel Power
@ -45 dBc ACLR
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range, Icc
(3)
Device Voltage, Vcc
Noise Figure
Device Bias
(3)
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
-40 to +85
°C
-65 to +150
°C
+28 dBm
+8 V
1400 mA
8W
+250
°C
Rating
Ordering Information
Part No.
AH312-S8G
AH312-S8PCB900
AH312-S8PCB1960
AH312-S8PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 7 March 2006
WJCI [ WJ COMMUNICATION. INC. ]
