AP501
Product Features
•
1930 – 1990 MHz
•
32.5 dB Gain
•
+36 dBm P1dB
•
-62 dBc ACPR
@ 27 dBm IS-95A linear power
The Communications Edge
TM
Product Information
PCS-band 4W HBT Amplifier Module
Product Description
The AP501 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 32.5 dB gain, while being able to
achieve high performance for PCS-band applications with
+36 dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -62 dBc
ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR
at 26.5 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP501 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
Functional Diagram
1
2
3
4
5
6
•
-55 dBc ACLR
@ 26.5 dBm wCDMA linear power
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
•
+12 V Single Supply
•
Power Down Mode
•
Bias Current Adjustable
•
RoHS-compliant flange-mount pkg
Applications
•
Final stage amplifiers for repeaters
•
Optimized for driver amplifier
The AP501 is targeted for use as a driver or final stage amplifier
PA mobile infrastructure
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Specifications
25 ºC, V
cc
=12V, V
pd
=5V, I
cq
=820mA, R7=0Ω, 50Ω unmatched fixture
Typical Performance
(4)
Units Min
Typ Max
Parameter
Operating Current @ 27 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
IS-95A ACPR @ 27dBm
(1)
wCDMA ACLR @ 26.5dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Parameter
Units Config1 Config2
mA
mA
V
Ω
MHz
dB
dBc
dBc
dB
dB
dBm
dBm
840
820
+12
0
1960
32.4
-61.8
-55
22
6
+36
+52
420
250
+12
730
1960
30.5
-53
-49
20
8
+36
+52
Operational Bandwidth
MHz
Test Frequency
MHz
Power Gain
dB
(1)
IS-95A ACPR @ 27dBm
dBc
(2)
wCDMA ACLR @ 26.5dBm
dBc
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
dBm
Output IP3
dBm
Operating Current @ 27 dBm
mA
Quiescent Current, Icq
mA
Device Voltage, Vcc
V
(3)
Device Voltage, Vpd
V
Load Stability
VSWR
1930 – 1990
1960
30
32.4
30.5
-61.8
-55
-55
22
6
+36
+52
790
840
940
780
820
920
+12
+5
10:1
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
Ω
-40 to +85
°C
-55 to +150
°C
+15 dBm
Rating
Ordering Information
Part No.
AP501
AP501-PCB
Description
PCS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 5 February 2006
WJCI [ WJ COMMUNICATION. INC. ]
