�½ Watt, High Linearity InGaP HBT Amplifier
ECP052D
Product Features
•
800 – 1000 MHz
•
+28.5 dBm P1dB
•
+44 dBm Output IP3
•
18 dB Gain @ 900 MHz
•
Single Positive Supply (+5V)
•
16-pin 4x4mm Pb-free/green/
RoHS-compliant QFN package
Product Description
The ECP052D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +44
dBm OIP3 and +28.5 dBm of compressed 1dB power.
It is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC
tested.
The ECP052D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP052D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Vbias
N/C
14
16
Vref 1
N/C 2
RF IN 3
N/C 4
5
N/C
6
N/C
7
N/C
8
N/C
15
N/C
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
N/C
Applications
•
Final stage amplifiers for
Repeaters
•
Mobile Infrastructure
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications
Parameter
Operational Bandwidth
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Units Min
MHz
MHz
dB
dBm
dBm
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
200
800
Typ
850
17
+28
+44
900
17.8
18
7
+28.7
+43
+23
7
250
+5
Max
1000
15.5
+27
+42.5
Noise Figure
Quiescent Current, Icq
Device Voltage, Vcc
300
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
°C
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
+250
°C
Ordering Information
Part No.
ECP052D-G
ECP052D-PCB900
Description
�½-Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 4
December 2006
WJCI [ WJ COMMUNICATION. INC. ]
