ECP053
Product Features
•
2300 – 2700 MHz
•
+28 dBm P1dB
•
+43 dBm Output IP3
•
13 dB Gain @ 2450 MHz
•
Single Positive Supply (+5V)
•
Available in SOIC-8 or 16pin
4mm QFN package
The Communications Edge
TM
Product Information
�½ Watt, High Linearity InGaP HBT Amplifier
Product Description
The ECP053 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +43
dBm OIP3 and +28 dBm of compressed 1dB power. It is
housed in an industry standard SOIC-8 or 16-pin 4x4mm
QFN SMT package. All devices are 100% RF and DC
tested.
The ECP053 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP053 to maintain high linearity over temperature and
operate directly off a single +5V supply.
This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications. The
device can also be used in next generation RFID readers.
Functional Diagram
Vbias
N/C
16
Vref 1
N/C 2
RF IN 3
N/C 4
5
N/C
6
N/C
7
N/C
8
N/C
15
N/C
14
N/C
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
ECP053D
Vref 1
8
Vbias
Applications
•
•
•
•
W-LAN
RFID
DMB
Fixed Wireless
N/C 2
7
RF OUT
RF IN 3
6
RF OUT
N/C 4
5
N/C
ECP053G
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Operating Current Range, Icc
(3)
Device Voltage, Vcc
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
MHz
dB
dB
dB
dBm
dBm
mA
V
2300
Typ
2450
13
20
8
+27
+42
5.3
2600
12
23
8
+27
+42
250
+5
Max
2700
200
300
Test conditions unless otherwise noted.
1. T = 25ºC, Vsupply = +5 V, Frequency = 2650 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)
Absolute Maximum Rating
Parameters
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
-40 to +85
°C
-65 to +150
°C
+28 dBm
+8 V
400 mA
2W
Ordering Information
Part No.
ECP053D
ECP053G
ECP053D-PCB2450
ECP053D-PCB2600
ECP053G-PCB2450
ECP053G-PCB2600
Rating
Description
�½ Watt InGaP HBT Amplifier (16p 4mm Pkg)
�½ Watt InGaP HBT Amplifier (Soic-8 Pkg)
2450 MHz Evaluation Board
2600 MHz Evaluation Board
2450 MHz Evaluation Board
2600 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
August 2004
WJCI [ WJ COMMUNICATION. INC. ]
