1 Watt, High Linearity InGaP HBT Amplifier
ECP100D
The Communications Edge
TM
Product Information
Product Features
x
400 – 2300 MHz
x
+31.5 dBm P1dB
x
+46 dBm Output IP3
Product Description
The ECP100D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.5 dBm of compressed 1-dB power.
It is housed in an industry standard Lead-
free/Green/RoHS-compliant 16-pin 4x4mm QFN SMT
package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless
technologies such as GPRS, GSM, CDMA, W-CDMA,
and UMTS, where high linearity and high power is
required. The internal active bias allows the ECP100D
to maintain high linearity over temperature and operate
directly off a +5 V supply.
Functional Diagram
Vbias
N/C
14
16
Vref 1
N/C 2
RF IN 3
N/C 4
5
N/C
6
N/C
7
N/C
8
N/C
N/C
15
N/C
13
12 N/C
11 RF OUT
10 RF OUT
9 N/C
x
18 dB Gain @ 900 MHz
x
12 dB Gain @ 1960 MHz
x
Single Positive Supply (+5V)
x
Lead-free/Green/RoHS-compliant
16pin 4mm QFN package
Applications
x
Final stage amplifiers for
Repeaters
x
Mobile Infrastructure
x
Defense / Homeland Security
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
Typical Performance
(4)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
400
400
10
2140
11
18
8
+31.5
+45
+25.5
+23
6.3
450
5
500
Typ Max
2300
Parameter
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
7.0
900
18
-13
-7
+31
+46
+25.
5
Typical
1960
12
-11
-10
+32
+46
+25.5
+23
5.5
6.2
+5 V @ 450 mA
¢
+29
+43.8
2140
11
-18
-8
+31.5
+45
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Operating Current Range , Icc
(3)
Device Voltage, Vcc
Noise Figure
Supply Bias
(3)
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: T = 25 ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 10, 11 and 16. It is expected that the current can increase by an additional 90 mA at P1dB.
Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will
pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Parameter
-40 to +85
qC
-65 to +125
qC
+26 dBm
+8 V
900 mA
5W
+250
qC
Rating
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
¡
Ordering Information
Part No.
ECP100D-G
ECP100D-PCB900
ECP100D-PCB1960
ECP100D-PCB2140
Description
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
(Lead-free/Green/RoHS-compliant 16-pin 4x4mm Pkg.)
1 Watt InGaP HBT Amplifier
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 7
April 2006
WJCI [ WJ COMMUNICATION. INC. ]
