FH101
High Dynamic Range FET
Product Features
x
x
x
x
x
x
x
50 – 4000 MHz
Low Noise Figure
18 dB Gain
+36 dBm OIP3
+18 dBm P1dB
Single or Dual Supply Operation
Lead-free/Green/RoHS-compliant
SOT-89 Package
x
MTTF > 100 years
Product Description
The FH101 is a high dynamic range FET packaged in a
low-cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85qC. The FH101 is available
in the environmentally-friendly lead-free/green/RoHS-
compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH101 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
Functional Diagram
4
1
2
3
Function
Gate
Drain
Source
Pin No.
1
3
2, 4
Applications
x
x
x
x
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
Defense / Homeland Security
Specifications
(1)
DC Electrical Parameter
Saturated Drain Current, Idss
Transconductance, Gm
Pinch-off Voltage, Vp
(3)
(2)
Typical Performance
(6)
Units Min
mA
mS
V
100
-3
Typ
140
120
-1.5
Max
170
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Gate Voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
900
19
-11
-10
+18.8
+36
2.7
Typical
1960
2140
16.5
16.5
-20
-22
-9
-9
+18.1
+19.1
+36
+36
3.1
3.0
5V @ 140mA
0
RF Parameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3
(4)
P1dB
Minimum Noise Figure
(5)
Drain Bias
Gate Bias
Units Min
MHz
MHz
dB
dB
dBm
dBm
dB
V
V
Typ
Max
50 – 4000
800
17
18
23
+32
+36
+18
0.77
+5
0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
1. DC and RF parameters are measured under the following conditions unless otherwise noted:
25 C with Vds = 5V, Vgs = 0V, in a 50 system.
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has
.
S
=
.
L
=
.
OPT
.
q
:
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
RF Input Power (continuous)
Junction Temperature
-40 to +85
qC
-55 to +150
qC
+7 V
-6 V
4.5 mA
4 dB above Input P1dB
+220
qC
Rating
Ordering Information
Part No.
FH101-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
Specifications and information are subject to change without notice.
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 1 of 7 April 2007
WJCI [ WJ COMMUNICATION. INC. ]
