FP1189
�½-Watt HFET
The Communications Edge
TM
Product Information
Product Features
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
Lead-free/Green/
RoHS-
compliant
SOT-89 Package
•
MTTF >100 Years
•
•
•
•
•
•
Product Description
The FP1189 is a high performance �½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 125 mA to achieve +40 dBm output IP3
performance and an output power of +27 dBm at 1-dB
compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP1189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85
°C
and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
•
•
•
•
•
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Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
Specifications
DC Parameter
Saturated Drain Current, I
dss
Transconductance, G
m
Pinch Off Voltage, V
p (2)
(1)
Typical Performance
(5)
Units Min
mA
mS
V
220
Typ
290
155
-2.1
Max
360
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(4)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
Typical
915 1960 2140 2450
20.6 15.7 14.7 13.2
13
26
24
36
6.0
9.6
9.0
7.6
+27.4 +27.2 +27.2 +28.1
+39.9 +40.4 +39.7 +40.0
2.7
3.7
4.3
+21
+20.8
+18.4
RF Parameter
(3)
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50
Ω,
unmatched)
Maximum Stable Gain
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
50
Typ
800
20.5
Max
4000
17
21
24
+27.4
+40
2.7
+8 V @ 125 mA
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
Drain Current
V
mA
+8
125
5. Typical parameters represent performance in a tuned application circuit.
1. I
dss
is measured with V
gs
= 0 V, V
ds
= 3 V.
2. Pinch-off voltage is measured when I
ds
= 1.2 mA.
3. Test conditions unless otherwise noted: T = 25ºC, V
DS
= 8 V, I
DQ
= 125 mA, in a tuned application
circuit with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
(optimized for output power).
4. 3OIP measured with
two
tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Junction Temperature
Rating
-40 to +85
°C
-55 to +150
°C
2.0 W
6 dB above Input P1dB
+16 V
+220
°C
Ordering Information
Part No.
FP1189-G
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
Description
�½ -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 11
October 2006
WJCI [ WJ COMMUNICATION. INC. ]
