FP2189
1-Watt HFET
Typical RF Performance
Drain Bias = +8 V, I
ds
= 250 mA, 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge
TM
Product Information
Reference Design: 2400 – 2600 MHz
The application circuit is matched for output power.
S-Parameters
20
MHz
dB
dB
dB
dBm
dBm
2400
12.9
-14.5
-7.9
+31.1
+45.0
2500
13.0
-26
-9.6
+31.2
+45.3
2600
12.6
-15
-11.4
+30.8
+47.0
10
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
(dB)
0
-10
-20
-30
2.2
2.3
2.4
2.5
2.6
Frequency (GHz)
2.7
2.8
The 2.4 – 2.6 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain an FP2189-PCB2140S evaluation board and modify it with the circuit
shown to achieve the performance shown in this reference design.
CAP
ID=C3
C=33 pF
Vds=8V @ 250 mA
CAP
ID=C8
C=1e4 pF
-Vgg
RES
ID= R1
R=10 Ohm
CAP
ID=C2
C=DNP pF
CAP
ID=C6
C=22 pF
CAP
ID=C7
C=1000 pF
TLIN
ID= TL2
Z0=50 Ohm
EL= 23.5 Deg
F0=2400 MHz
IND
ID= L2
L= 18 nH CAP
ID=C9
C=22 pF
IND
ID=L1
L=5.6 nH
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=22 pF
TLIN
ID=TL1
Z0=50 Ohm
EL= 11.8 Deg
F0=2400 MHz
SUBCKT
ID=Q1
NET="FP2189"
RES
ID=R2
R=5.6 Ohm
1
2
PORT
P= 2
Z= 50 Ohm
CAP
ID=C4
C=DNP pF
CAP
ID=C11
C=1.8 pF
CAP
ID=C5
C=1.3 pF
Bill of Materials
Ref. Desig.
C1, C6, C9
C3
C5
C11
C7
C8
L1
L2
R1
R2
Q1
C2, C4
Value
22 pF
33 pF
1.3 pF
1.8 pF
1000 pF
0.1
µF
5.6 nH
18 nH
10
5.6
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0805
0603
0603
0603
1206
0603
0603
0603
0603
SOT-89
14 mil GETEK
TM
ML200DSS (ε
r
= 4.2)
The main microstrip line has a line impedance of 50 .
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 9 of 12
October 2006