FP31QF
2-Watt HFET
The Communications Edge
TM
Product Information
Product Features
50 – 4000 MHz
18 dB Gain @ 900 MHz
+34 dBm P1dB
+46 dBm Output IP3
High Drain Efficiency
Lead free/RoHS-compliant 6mm
28-pin QFN package
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MTTF > 100 years
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Product Description
The FP31QF is a high performance 2-Watt HFET
(Heterostructure FET) in a low-cost lead-free/RoHS-
compliant 28-pin 6x6 mm QFN (Quad Flatpack, No-
Lead) surface-mount package.
This device works
optimally at a drain bias of +9 V and 450 mA to achieve
+46 dBm output IP3 performance and an output power of
+34 dBm at 1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP31QF has an associated MTTF of a
minimum of 100 years at a mounting temperature of 85
°C.
All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
GND
GND
GND
GND
28
GND 1
GND 2
GATE / 3
RF IN
GND 4
GND 5
GND 6
GND 7
8
GND
9
GND
10
GND
11
GND
12
GND
13
GND
14
GND
27
GND
23
26
25
24
22
21 GND
20 GND
19 DRAIN /
RF OUT
18 GND
17 GND
16 GND
15 GND
GND
Applications
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Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Gate /
RF Input
Drain /
RF Output
Ground
Pin No.
3
19
All other pins &
backside copper
Specifications
DC Parameter
Saturated Drain Current, I
dss
Transconductance, G
m
Pinch Off Voltage, V
p (1)
Typical Performance
(4)
Units Min
mA
mS
V
Typ Max
1170
590
-2.0
Parameter
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(3)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
V
mA
915
18
-20
-12
+34
+46
3.5
+27.8
Typical
1960 2140 2450
13.5
13
12
-20
-18
-18
-11
-24
-15
+33.8 +33.2 +33.5
+46.8 +46.6 +46.8
4.5
4.6
4.6
+27.3
+25
+9
450
RF Parameter
(2)
Operational Bandwidth
Test Frequency
Small Signal Gain
Maximum Stable Gain
Output P1dB
Output IP3
(3)
Noise Figure
Units Min
MHz
MHz
dB
dB
dBm
dBm
dB
50
Typ Max
4000
800
18
24
+34
+46
3.5
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
(5)
Drain Current
(5)
1. Pinch-off voltage is measured when I
ds
= 4.8 mA.
2. Test conditions unless otherwise noted: T = 25 ºC, V
DS
= 9 V, I
DQ
= 450 mA, in a tuned
application circuit with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
(optimized for output power).
3. 3OIP measured with two tones at an output power of +18 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. Typical parameters represent performance in an application circuit.
5. Empirical measurements showed optimal power performance at a drain voltage = 9 volts at 450 mA.
Because the FP31QF is a discrete device, users can choose their own bias configuration. Performance
may vary from the data shown depending on the biasing conditions. To achieve a minimum 1 million
hours MTTF rating, the biasing condition should maintain a junction temperature below 160
°C
over all
operating temperatures. This can be approximated by (drain voltage) x (drain current) x 17.5
°C/W
+
(maximum operating temperature).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Junction Temperature
Rating
-40 to +85
°C
-55 to +125
°C
7.5 W
6 dB above Input P1dB
+16 V
+220
°C
Ordering Information
Part No.
FP31QF-F
FP31QF-PCB900
FP31QF-PCB1900
FP31QF-PCB2140
Description
2-Watt HFET
(lead-free/RoHS-compliant 6mm QFN package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc
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Phone 1-800-WJ1-4401
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FAX: 408-577-6621
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e-mail: sales@wj.com
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Web site: www.wj.com
Page 1 of 12 October 2006
WJCI [ WJ COMMUNICATION. INC. ]
