The Communications Edge TM
FP31QF
2-Watt HFET
Product Information
Application Circuit: 2110 – 2170 MHz (FP31QF-PCB2140)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, Ids = 450 mA, 25 °C
Frequency
MHz
dB
2110
13.2
-17
2140
13.3
-19
2170
13.1
-16
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
dB
dB
-14
-24
-18
dBm
+33.6 +33.2 +33.3
+46.6
Output IP3
(+18 dBm / tone, 1 MHz spacing)
dBm
dB
Noise Figure
4.7
4.6
4.9
IS-95 Channel Power
@ -45 dBc ACPR
dBm
+25
Bill of Materials
Part style
Ref. Desig.
Value
22 pF
2 pF
Size
C1, C4, C8, C10
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Wirewound chip inductor
Multilayer chip inductor
Chip resistor
0603
0603
0603
1206
0805
0603
0603
0603
QFN 6x6
C2, C3
C7, C11
C12
1000 pF
0.1 µF
12 nH
4.7 nH
5.1 Ω
L1, L2
L3
R1
C2
C3
R2
Q1
51 Ω
FP31QF
Chip resistor
WJ 2W HFET
Do Not Place
C5, C6
•
•
•
•
The C2 and C3 placements are at silk screen markers, “A” and “2.5”, respectively.
The via hole spacing along the main microstrip line is .040”.
The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
Circuit Board Material: .014” FR-4 (εr = 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50 Ω.
ID=C7
C=1000 pF
ID=C8
C=22 pF
-Vgg
Vds=9V @ 450 mA
ID=C12
C=1e5 pF
ID=R2
R=51 Ohm
ID=C11
C=1000 pF
ID=C10
C=22 pF
TLINP
ID=TL1
Z0=50 Ohm
L=150 mil
Eeff=3.46
NET="FP31QF"
ID=L1
L=12 nH
ID=L2
L=12 nH
2
ID=L3
ID=C4
C=22 pF
ID=C1
Loss=0
L=4.7 nH
C=22 pF
F0=0 MHz
1
ID=R1
R=5.1 Ohm
TLINP
ID=TL2
Z0=50 Ohm
L=180 mil
Eeff=3.46
Loss=0
ID=C2
C=2 pF
ID=C3
C=2 pF
F0=0 MHz
Specifications and information are subject to change without notice
Page 7 of 12 October 2006
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
WJCI [ WJ COMMUNICATION. INC. ]
