WTE
POWER SEMICONDUCTORS
1N4933 – 1N4937
Pb
1.0A FAST RECOVERY DIODE
Features
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
Min
Max
25.4
—
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
50
35
100
70
200
140
1.0
400
280
600
420
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
30
1.2
5.0
100
200
15
-65 to +125
-65 to +150
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N4933 – 1N4937
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
