W TE
PO WE R SEM IC O ND U C TO RS
1N5391 – 1N5399
1.5A SILICON RECTIFIER
Features
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
Marking: Type Number
D
DO-15
Dim
Min
Max
A
25.4
—
B
5.50
7.62
C
0.71
0.864
D
2.60
3.60
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
5391
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.5A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
5392
100
70
1N
5393
200
140
1N
5395
400
280
1.5
1N
5397
600
420
1N
5398
800
560
1N
5399
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
50
1.0
5.0
50
30
50
-65 to +125
-65 to +150
A
V
µA
pF
K/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5391 – 1N5399
1 of 3
© 2002 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
