WTE
POWER SEMICONDUCTORS
DF005S – DF10S
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
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Glass Passivated Die Construction
G
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
B
Plastic Material – UL Recognition Flammability
Classification 94V-O
L
J
-
~
+
~
A
C
D
E
H
Mechanical Data
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Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
K
Polarity: As Marked on Case
*Low profile models (J = 2.20~2.50mm) are available.
Weight: 0.38 grams (approx.)
Please consult factory.
Mounting Position: Any
Marking: Type Number
DF-S
Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
0.009
0.25
D
0.076
0.33
E
—
10.40
G
1.02
1.53
H
8.13
8.51
J*
3.20
3.40
K
5.0
5.20
L
1.00
1.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DF
005S
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
A
= 40°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
DF
01S
100
70
DF
02S
200
140
DF
04S
400
280
1.0
DF
06S
600
420
DF
08S
800
560
DF
10S
1000
700
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 125°C
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
, T
STG
30
1.1
10
500
25
110
-65 to +150
A
V
µA
pF
K/W
°C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to ambient mounted on PC board with 5.0mm
2
(0.03mm thick) land areas.
DF005S – DF10S
1 of 3
© 2002 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
