WTE
POWER SEMICONDUCTORS
ER3A – ER3J
Pb
3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
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Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 100A Peak
Low Power Loss
A
Super-Fast Recovery Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMC/DO-214AB
Dim
Min
Max
5.59
6.22
A
6.60
7.11
B
2.75
3.25
C
0.152
0.305
D
7.75
8.13
E
2.00
2.62
F
0.051
0.203
G
0.76
1.27
H
All Dimensions in mm
D
Mechanical Data
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Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.21 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 75°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
ER3A
@T
A
=25°C unless otherwise specified
ER3B
ER3C
ER3D
ER3E
ER3G
ER3J
Unit
50
35
100
70
150
105
200
140
3.0
300
210
400
280
600
420
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
0.95
100
1.25
5.0
500
35
45
16
-65 to +150
1.7
A
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
ER3A – ER3J
1 of 4
© 2006 Won-Top Electronics