WTE
POWER SEMICONDUCTORS
ES1A – ES1J
Pb
1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
A
Super-Fast Recovery Time
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMA/DO-214AC
Dim
Min
Max
2.50
2.90
A
4.00
4.60
B
1.20
1.60
C
0.152
0.305
D
4.80
5.28
E
2.00
2.44
F
0.051
0.203
G
0.76
1.52
H
All Dimensions in mm
D
Mechanical Data
!
!
!
!
!
!
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 120°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
ES1A
@T
A
=25°C unless otherwise specified
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J
Unit
50
35
100
70
150
105
200
140
1.0
300
210
400
280
600
420
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
0.95
30
1.25
5.0
500
35
10
35
-65 to +150
1.7
A
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
ES1A – ES1J
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
