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HER306 参数 Datasheet PDF下载

HER306图片预览
型号: HER306
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0A超快速二极管 [3.0A ULTRAFAST DIODE]
分类和应用: 整流二极管
文件页数/大小: 4 页 / 52 K
品牌: WTE [ WON-TOP ELECTRONICS ]
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WTE
POWER SEMICONDUCTORS
HER301 – HER308
Pb
3.0A ULTRAFAST DIODE
Features
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-201AD
Dim
Min
Max
25.4
A
7.20
9.50
B
1.20
1.30
C
4.80
5.30
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER
301
50
35
HER
302
100
70
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
HER
303
200
140
HER
304
300
210
3.0
HER
305
400
280
HER
306
600
420
HER
307
800
560
HER
308
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
80
1.0
150
1.3
10
100
75
50
-65 to +125
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER301 – HER308
1 of 4
© 2006 Won-Top Electronics