WTE
POWER SEMICONDUCTORS
S1A – S1M
Pb
1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE
Features
!
!
!
!
!
!
!
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Power Loss
A
Built-in Strain Relief
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G
E
SMB/DO-214AA
Dim
Min
Max
3.30
3.94
A
4.06
4.70
B
1.91
2.11
C
0.152
0.305
D
5.08
5.59
E
2.13
2.44
F
0.051
0.203
G
0.76
1.27
H
All Dimensions in mm
D
Mechanical Data
!
!
!
!
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
S1A
@T
A
=25°C unless otherwise specified
S1B
S1D
S1G
S1J
S1K
S1M
Unit
50
35
100
70
200
140
400
280
1.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
30
1.10
5.0
200
2.5
15
30
-65 to +175
A
V
µA
µS
pF
°C/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
S1A – S1M
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
