W TE
PO WE R SEM IC O ND UC TO R S
SB120 – SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Features
!
!
!
!
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
A
B
A
C
D
Mechanical Data
!
!
!
!
!
!
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
DO-41
Dim
Min
Max
A
25.4
—
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@T
L
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
JL
R
JA
T
j
, T
STG
@T
A
=25°C unless otherwise specified
SB120
20
14
SB130
30
21
SB140
40
28
1.0
40
SB150
50
35
SB160
60
42
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
0.50
0.5
10
110
15
50
-65 to +150
0.70
V
mA
80
pF
K/W
K/W
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB120 - SB160
1 of 3
© 2002 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
