WTE
POWER SEMICONDUCTORS
SB320 – SB3100
Pb
3.0A SCHOTTKY BARRIER DIODE
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
High Current Capability
A
B
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
D
A
C
Mechanical Data
!
!
!
!
!
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
DO-201AD
Dim
Min
Max
25.4
—
A
7.20
9.50
B
1.20
1.30
C
4.80
5.30
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
L
= 95°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25°C unless otherwise specified
SB320 SB330 SB340
20
14
30
21
40
28
SB350 SB360
50
35
3.0
60
42
SB380 SB3100
80
56
100
70
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
, T
STG
0.50
80
0.75
0.5
20
250
20
-65 to +150
0.85
A
V
mA
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB320 – SB3100
1 of 4
© 2006 Won-Top Electronics
WTE [ WON-TOP ELECTRONICS ]
