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SS18 参数 Datasheet PDF下载

SS18图片预览
型号: SS18
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0A表面贴装肖特基二极管 [1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE]
分类和应用: 肖特基二极管
文件页数/大小: 4 页 / 45 K
品牌: WTE [ WON-TOP ELECTRONICS ]
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WTE
POWER SEMICONDUCTORS
SS12 – S100
Pb
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
B
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage Application
A
Guard Ring Die Construction
F
Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
H
G

E
SMA/DO-214AC
Dim
Min
Max
2.50
2.90
A
4.00
4.60
B
1.20
1.60
C
0.152
0.305
D
4.80
5.28
E
2.00
2.44
F
0.051
0.203
G
0.76
1.52
H
All Dimensions in mm
D
Mechanical Data
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Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
SS12
SS13
@T
A
=25°C unless otherwise specified
SS14
SS15
SS16
SS18
SS19
S100
Unit
20
14
30
21
40
28
50
35
1.0
60
42
80
56
90
64
100
71
V
V
A
I
FSM
V
FM
I
RM
R
JL
R
JA
T
j
T
STG
0.50
30
0.70
0.5
20
28
88
-65 to +125
-65 to +150
0.85
A
V
mA
°C/W
°C
°C
Typical Thermal Resistance (Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Mounted on P.C. Board with 5.0mm
2
copper pad area.
SS12 – S100
1 of 4
© 2006 Won-Top Electronics