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X20C04P 参数 Datasheet PDF下载

X20C04P图片预览
型号: X20C04P
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性静态RAM [Nonvolatile Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 69 K
品牌: XICOR [ XICOR INC. ]
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X20C04  
ABSOLUTE MAXIMUM RATINGS*  
*COMMENT  
Temperature under Bias .................. –65°C to +135°C  
Storage Temperature ....................... –65°C to +150°C  
Voltage on any Pin with  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
This is a stress rating only and the functional operation of  
the device at these or any other conditions above those  
indicatedintheoperationalsectionsofthisspecificationis  
not implied. Exposure to absolute maximum rating condi-  
tions for extended periods may affect device reliability.  
Respect to V  
....................................... –1V to +7V  
SS  
D.C. Output Current ........................................... 10mA  
Lead Temperature (Soldering, 10 seconds)..... 300°C  
RECOMMENDED OPERATING CONDITIONS  
Temperature  
Min.  
Max.  
Commercial  
Industrial  
Military  
0°C  
+70°C  
+85°C  
+125°C  
Supply Voltage  
Limits  
–40°C  
–55°C  
X20C04  
5V ±10%  
3825 PGM T02.1  
3825 PGM T03  
D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.)  
Limits  
Symbol  
Parameter  
Min.  
Max.  
Units  
Test Conditions  
NE = WE = V , CE = OE = V  
IL  
l
V
Current (Active)  
100  
mA  
CC1  
CC  
IH  
Address Inputs = 0.4V/2.4V levels  
@ f = 5MHz. All I/Os = Open  
I
V
V
Current During Store  
Standby Current  
10  
mA  
All Inputs = V  
IH  
CC2  
CC  
CC  
All I/Os = Open  
CE = V  
I
I
10  
mA  
SB1  
SB2  
IH  
(TTL Input)  
All Other Inputs = V , All I/Os = Open  
IH  
V
Standby Current  
250  
µA  
All Inputs = V – 0.3V  
CC  
CC  
(CMOS Input)  
All I/Os = Open  
I
I
Input Leakage Current  
Output Leakage Current  
Input LOW Voltage  
Input HIGH Voltage  
Output LOW Voltage  
Output HIGH Voltage  
10  
10  
µA  
µA  
V
V
V
= V to V  
SS CC  
LI  
IN  
= V to V , CE = V  
IH  
LO  
OUT  
SS  
CC  
(1)  
V
V
V
V
–1  
2
0.8  
IL  
(1)  
V
+ 0.5  
V
IH  
CC  
0.4  
V
I
I
= 2.1mA  
OL  
OH  
OL  
2.4  
V
= –400µA  
OH  
3825 PGM T04.3  
POWER-UP TIMING  
Symbol  
Parameter  
Max.  
Units  
(2)  
t
t
Power-Up to RAM Operation  
100  
5
µs  
PUR  
(2)  
Power-Up to Nonvolatile Operation  
ms  
PUW  
3825 PGM T05  
CAPACITANCE TA = +25°C, F = 1MHz, VCC = 5V.  
Symbol  
Test  
Max.  
Units  
Conditions  
(2)  
C
C
Input/Output Capacitance  
Input Capacitance  
10  
6
pF  
pF  
V
V
= 0V  
I/O  
I/O  
(2)  
= 0V  
IN  
IN  
3825 PGM T06.1  
Notes: (1) V min. and V max. are for reference only and are not tested.  
IL IH  
(2) This parameter is periodically sampled and not 100% tested.  
4