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X20C05J-55 参数 Datasheet PDF下载

X20C05J-55图片预览
型号: X20C05J-55
PDF下载: 下载PDF文件 查看货源
内容描述: 高速自动存储™ NOVRAM [High Speed AUTOSTORE⑩ NOVRAM]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 19 页 / 84 K
品牌: XICOR [ XICOR INC. ]
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X20C05  
PIN DESCRIPTIONS  
Addresses (A0–A8)  
Nonvolatile Enable (NE)  
The Nonvolatile Enable input controls the recall function  
2
to the E PROM array.  
The Address inputs select an 8-bit memory location  
during a read or write operation.  
AUTOSTORE Output (AS)  
AS is an open drain output which, when asserted indi-  
Chip Enable (CE)  
cates V has fallen below the AUTOSTORE threshold  
CC  
(V  
). AS may be wire-ORed with multiple open drain  
The Chip Enable input must be LOW to enable all read/  
writeoperations.WhenCEisHIGH,powerconsumption  
is reduced.  
ASTH  
outputsandusedasaninterruptinputtoamicrocontroller.  
PIN NAMES  
Output Enable (OE)  
TheOutputEnableinputcontrolsthedataoutputbuffers  
and is used to initiate read and recall operations. Output  
Enable LOW disables a store operation regardless of  
the state of CE, WE, or NE.  
Symbol  
A –A  
Description  
Address Inputs  
Data Input/Output  
Write Enable  
Chip Enable  
0
8
I/O –I/O  
0
7
WE  
CE  
OE  
NE  
AS  
Data In/Data Out (I/O0–I/O7)  
Data is written to or read from the X20C05 through the  
I/O pins. The I/O pins are placed in the high impedance  
statewheneither CE or OE isHIGHorwhen NE isLOW.  
Output Enable  
Nonvolatile Enable  
AUTOSTORE Output  
+5V  
Write Enable (WE)  
The Write Enable input controls the writing of data to the  
RAM.  
V
CC  
V
SS  
Ground  
NC  
No Connect  
3827 PGM T01  
FUNCTIONAL DIAGRAM  
V
SENSE  
AS  
CC  
EEPROM ARRAY  
ROW  
SELECT  
RECALL  
HIGH SPEED  
512 x 8  
A –A  
3
6
SRAM  
ARRAY  
ORE  
ST  
CE  
OE  
WE  
NE  
CONTROL  
LOGIC  
COLUMN  
SELECT  
&
A –A  
0
2
A –A  
7
8
I/OS  
3827 FHD F01  
I/O –I/O  
0
7
2