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X20C16P-55 参数 Datasheet PDF下载

X20C16P-55图片预览
型号: X20C16P-55
PDF下载: 下载PDF文件 查看货源
内容描述: 高速自动存储™ NOVRAM [High Speed AUTOSTORE⑩ NOVRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 21 页 / 96 K
品牌: XICOR [ XICOR INC. ]
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X20C16
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65°C to +135°C
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to V
SS .......................................
–1V to +7V
D.C. Output Current ........................................... 10mA
Lead Temperature (Soldering, 10 seconds) ...... 300°C
RECOMMENDED OPERATING CONDITIONS
Temperature
Commercial
Industrial
Military
Min.
0°C
–40°C
–55°C
Max.
+70°C
+85°C
+125°C
3826 PGM T02.1
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any conditions other than those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
Supply Voltage
X20C16
Limits
5V
±10%
3826 PGM T03.1
D.C. OPERATING CHARACTERISTICS
(Over recommended operating conditions unless otherwise specified.)
Limits
Symbol
l
CC1
Parameter
V
CC
Current (Active)
Min.
Max.
100
Units
mA
Test Conditions
NE
=
WE
= V
IH
,
CE
=
OE
= V
IL
Address Inputs = 0.4V/2.4V Levels
@ f = 20MHz All I/Os = Open
All Inputs = V
IH
All I/Os = Open
CE
= V
IH,
All Other Inputs = V
IH
All I/Os = Open
All Inputs = V
CC
– 0.3V
All I/Os = Open
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
,
CE
= V
IH
I
CC2
I
CC3(2)
I
SB1
I
SB2
I
LI
I
LO
V
IL(1)
V
IH(1)
V
OL
V
OLAS
V
OH
V
CC
Current During Store
V
CC
Current During
AUTOSTORE
V
CC
Standby Current
(TTL Input)
V
CC
Standby Current
(CMOS Input)
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
AUTOSTORE Output
Output HIGH Voltage
5
2.5
10
250
10
10
0.8
V
CC
+ 0.5
0.4
0.4
mA
mA
mA
µA
µA
µA
V
V
V
V
V
–1
2
2.4
I
OL
= 4mA
I
OLAS
= 1mA
I
OH
= –4mA
3826 PGM T04.3
POWER-UP TIMING
Symbol
t
PUR(2)
t
PUW(2)
Parameter
Power-Up to RAM Operation
Power-Up to Nonvolatile Operation
Max.
100
5
Units
µs
ms
3826 PGM T05
CAPACITANCE
T
A
= +25°C, f = 1MHz, V
CC
= 5V.
Symbol
C
I/O(2)
C
IN(2)
Test
Input/Output Capacitance
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
3826 PGM T06.1
Notes:
(1) V
IL
min. and V
IH
max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
4