X22C10
256 Bit
X22C10
Nonvolatile Static RAM
DESCRIPTION
64 x 4
FEATURES
•
•
•
•
•
•
•
•
High Performance CMOS
—120ns RAM Access Time
High Reliability
—Store Cycles: 1,000,000
—Data Retention: 100 Years
Low Power Consumption
—Active: 40mA Max.
—Standby: 100
µ
A Max.
Infinite Array Recall, RAM Read and Write Cycles
Nonvolatile Store Inhibit: V
CC
= 3.5V Typical
Fully TTL and CMOS Compatible
JEDEC Standard 18-Pin 300-mil DIP
100% Compatible with X2210
—With Timing Enhancements
The X22C10 is a 64 x 4 CMOS NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile E
2
PROM. The NOVRAM design allows data to
be easily transferred from RAM to E
2
PROM (STORE)
and from E
2
PROM to RAM (RECALL). The STORE
operation is completed within 5ms or less and the
RECALL is completed within 1µs.
Xicor NOVRAMs are designed for unlimited write opera-
tions to the RAM, either RECALLs from E
2
PROM or
writes from the host. The X22C10 will reliably endure
1,000,000 STORE cycles. Inherent data retention is
greater than 100 years.
FUNCTIONAL DIAGRAM
PIN CONFIGURATION
PLASTIC DIP
CERDIP
2
NONVOLATILE E PROM
MEMORY ARRAY
STORE
A0
A1
A2
VCC
COLUMN
I/O CIRCUITS
VSS
ROW
SELECT
STATIC RAM
MEMORY ARRAY
ARRAY
RECALL
NC
A4
A3
A2
A1
A0
CS
VSS
STORE
1
2
3
4
5
6
7
8
9
18
17
16
15
X22C10 14
13
12
11
10
VCC
NC
A5
I/O4
I/O3
I/O2
I/01
WE
RECALL
3815 FHD F02
STORE
RECALL
I/O1
I/O2
I/O3
I/O4
CONTROL
LOGIC
INPUT
DATA
CONTROL
COLUMN SELECT
SOIC
A4
A3
A2
A1
A0
CS
VSS
3815 FHD F01
1
2
3
4
5
6
7
8
X22C10
16
15
14
13
12
11
10
9
A3
A4
A5
VCC
A5
I/O4
I/O3
I/O2
I/O1
WE
RECALL
3815 FHD F08.1
CS
WE
STORE
© Xicor, Inc. 1991,1995 Patents Pending
3815-2.4 7/26/96 T0/CO/D3 SH
1
Characteristics subject to change without notice
XICOR [ XICOR INC. ]
