X22C12
MODE SELECTION
CE
H
L
L
L
X
H
X
H
WE
X
H
L
L
H
X
H
X
RECALL
H
H
H
H
L
L
H
H
STORE
H
H
H
H
H
H
L
L
I/O
Output High Z
Output Data
Input Data High
Input Data Low
Output High Z
Output High Z
Output High Z
Output High Z
Mode
Not Selected
(3)
Read RAM
Write “1” RAM
Write “0” RAM
Array Recall
Array Recall
Nonvolatile Store
(4)
Nonvolatile Store
(4)
3817 PGM T05.1
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Store Cycles
Data Retention
POWER-UP TIMING
Symbol
t
PUR(5)
t
PUW(5)
Parameter
Power-up to Read Operation
Power-up to Write or Store Operation
Max.
100
5
Units
µs
ms
3817 PGM T07
Min.
100,000
1,000,000
100
Units
Data Changes Per Bit
Store Cycles
Years
3817 PGM T06
EQUIVALENT A.C. LOAD CIRCUIT
5V
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and
Fall Times
Input and Output
Timing Levels
100pF
0V to 3V
10ns
1.5V
3817 PGM T04.1
919Ω
OUTPUT
497Ω
3815 FHD F09.1
Notes:
(3) Chip is deselected but may be automatically completing a store cycle.
(4)
STORE
= LOW is required only to initiate the store cycle, after which the store cycle will be automatically completed
(e.g.
STORE
= X).
(5) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated. These
parameters are periodically sampled and not 100% tested.
4