X2816C
16K
X2816C
5 Volt, Byte Alterable E
2
PROM
DESCRIPTION
2048 x 8 Bit
FEATURES
•
•
•
•
•
•
•
90ns Access Time
Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or V
PP
Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
High Performance Advanced NMOS Technology
Fast Write Cycle Times
—16 Byte Page Write Operation
—Byte or Page Write Cycle: 5ms Typical
—Complete Memory Rewrite: 640ms Typical
—Effective Byte Write Cycle Time: 300
µ
s
Typical
DATA
Polling
—Allows User to Minimize Write Cycle Time
JEDEC Approved Byte-Wide Pinout
High Reliability
—Endurance: 10,000 Cycles
—Data Retention: 100 Years
The Xicor X2816C is a 2K x 8 E
2
PROM, fabricated with
an advanced, high performance N-channel floating gate
MOS technology. Like all Xicor Programmable nonvola-
tile memories it is a 5V only device. The X2816C
features the JEDEC approved pinout for byte-wide
memories, compatible with industry standard RAMs,
ROMs and EPROMs.
The X2816C supports a 16-byte page write operation,
typically providing a 300µs/byte write cycle, enabling the
entire memory to be written in less than 640ms. The
X2816C also features
DATA
Polling, a system software
support scheme used to indicate the early completion of
a write cycle.
Xicor E
2
PROMs are designed and tested for applica-
tions requiring extended endurance. Inherent data re-
tention is greater than 100 years.
PIN CONFIGURATION
LCC
PLCC
VCC
WE
NC
NC
NC
PLASTIC DIP
SOIC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
X2816C
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
3852 FHD F02.1
4
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
3
2
1 32 31 30
29
28
27
26
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
X2816C
13
21
14 15 16 17 18 19 20
VSS
I/O1
I/O2
NC
I/O3
I/O4
I/O5
NC
A7
25
24
23
22
3852 FHD F03
©Xicor, 1995 Patents Pending
3852-1.4 3/27/96 T2/C3/D5 NS
1
Characteristics subject to change without notice