X84256
—Write ‘1’—when reading data
—Read/Read/Write ‘1’—after data is written to device,
but before entering the NV write sequence.
—the device powers-up;
—a nonvolatile write operation completes.
While a sequential read is in progress, the device remains
in an active state. This state draws more current than the
idle state, but not as much as during a read itself. To go
back to the lowest power condition, an invalid condition is
created by writing a ‘1’ after the last bit of a read operation.
Write Protection
The following circuitry has been included to prevent
inadvertent nonvolatile writes:
—A special “start nonvolatile write” command sequence
is required to start a nonvolatile write cycle.
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias ...................... –65°C to +135°C
Storage Temperature ........................... –65°C to +150°C
Terminal Voltage with
Respect to V
SS
.......................................–1V to +7V
DC Output Current................................................... 5mA
Lead Temperature (Soldering, 10 seconds)..........300°C
Preliminary
RECOMMENDED OPERATING CONDITIONS
Temperature
Commercial
Industrial
Military†
Min.
0°C
–40°C
–55°C
Max.
+70°C
+85°C
+125°C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation
of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Supply Voltage
X84256
X84256 – 2.5
X84256 – 1.8
Limits
5V
±
10%
2.5V to 5.5V
1.8V to 3.6V
D.C. OPERATING CHARACTERISTICS (V
CC
= 5V
±
10%)
(Over the recommended operating conditions, unless otherwise specified.)
Limits
Symbol
I
CC1
I
CC2
I
SB1
I
LI
I
LO
V
lL
(1)
V
IH
(1)
V
OL
V
OH
Parameter
V
CC
Supply Current (Read)
V
CC
Supply Current (Write)
V
CC
Standby Current
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Min.
Max.
1
3
1
10
10
Units
mA
mA
µ
A
µ
A
µ
A
V
V
V
V
Test Conditions
OE = V
IL
, WE = V
IH
,
I/O = Open, CE clocking @ 10MHz
I
CC
During Nonvolatile Write Cycle
All Inputs at CMOS Levels
CE = V
CC
, Other Inputs = V
CC
or V
SS
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
–0.5
V
CC
x 0.7
V
CC
x 0.3
V
CC
+ 0.5
0.4
I
OL
= 2.1mA
I
OH
= –1mA
V
CC
– 0.8
Notes:
(1) V
IL
Min. and V
IH
Max. are for reference only and are not tested.
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