Unitpower
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
100V
UD0002U
Ver 1.0
I
D
10A
R
DS(ON)
(m
Ω
) Max
213
@
VGS=10V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
G
D
S
STU SERIES
TO - 252AA( D - PAK )
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
100
±20
T
C
=25°C
T
C
=70°C
10
8
29
11
T
C
=25°C
T
C
=70°C
50
32
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
R
JA
Thermal Resistance, Junction-to-Case
a
a
2.5
50
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Sep,02,2010
1
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
