UD6001
P-Ch 60V Fast Switching MOSFETs
P-Channel Typical Characteristics
8
215
I
D
=-5A
-I
D
Drain Current (A)
6
180
4
V
GS
=-4.5V
2
V
GS
=-5V
V
GS
=-4V
0
0
0.5
1
1.5
2
RDSON (mΩ)
V
GS
=-10V
V
GS
=-7V
145
110
75
2
4
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
-V
GS
Gate to Source Voltage (V)
1
10
Fig.2 On-Resistance vs. G-S Voltage
10
V
DS
=-12V
I
D
=-5A
8
-I
S
Source Current(A)
7.5
T
J
=150℃
6
T
J
=25℃
5
4
2
2.5
0
0.2
0.4
0.6
0.8
0
-V
SD
, Source-to-Drain Voltage (V)
0
QG , Total Gate Charge (nC)
3.5
7
10.5
14
Fig.3 Forward Characteristics Of Reverse
1.8
2.0
Fig.4 Gate-Charge Characteristics
1.4
1
0.6
0.2
-50
Normalized On Resistance
Normalized -V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (℃)
0
50
100
150
-50
T
J
, Junction Temperature (℃)
25
100
175
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
