UM3201
Dual P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
10
144
ID=-10A
8
-I
D
Drain Current (A)
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
117
R
DSON
(mΩ)
2
6
90
4
V
GS
=-4.5V
V
GS
=-3V
2
63
0
0
0.5
1
1.5
36
2
4
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
10
Fig.2 On-Resistance vs. Gate-Source
10
-V
GS
Gate to Source Voltage (V)
V
DS
=-20V
8
8
I
D
=-6A
-I
S
Source Current(A)
T
J
=150℃
6
T
J
=25℃
6
4
4
2
2
0
0.2
0.4
0.6
0.8
1
0
0
4
8
12
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
1.8
2.0
Fig.4 Gate-charge Characteristics
1.4
1
0.6
0.2
-50
Normalized On Resistance
Normalized -V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (℃)
0
50
100
150
-50
T
J
, Junction Temperature (℃)
25
100
175
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
