US2402
Unitpoower
N-Channel Enhancement Mode MOSFET
D
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
20V
R
DS(ON)
50m
I
D
3A
G
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
1
SYMBOL
V
GS
LIMITS
±16
3
1
10
4.5
1
0.75
0.3
-55 to 150
UNITS
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AS
E
AS
P
D
T
j
, T
stg
A
mJ
W
°C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1
SYMBOL
R
θJA
TYPICAL
MAXIMUM
166
UNITS
°C / W
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
1
Resistance
Forward Transconductance
1
1
LIMITS
UNIT
MIN TYP MAX
20
0.4
0.8
1.2
±100
1
10
10
55
37
13
85
50
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
= ±16V
V
DS
= 16V, V
GS
= 0V
V
DS
= 12V, V
GS
= 0V, T
J
= 125 °C
V
DS
= 10V, V
GS
= 4.5V
V
GS
= 2.5V, I
D
= 1.5A
V
GS
= 4.5V, I
D
= 3A
V
DS
= 5V, I
D
= 3A
V
nA
µA
A
m
S
REV1.0
1
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
