US3416
N-Ch 20V Fast Switching MOSFETs
General Description
The US3416 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3416 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
20V
Applications
R
DS(ON)
28mΩ
ID
4.8A
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Load Switch
SOT23 Pin Configuration
G
D
S
Absolute Maximum Ratings
Rating
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
P
D
@T
A
=70℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
3
10s
Steady State
20
±8
Units
V
V
5.5
4.4
30
1.32
0.84
-55 to 150
-55 to 150
4.8
3.8
1
0.64
A
A
A
W
W
℃
℃
Total Power Dissipation
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Ambient (t
≤
10s)
Thermal Resistance Junction-Case
1
1
Typ.
---
---
---
Max.
125
95
80
Unit
℃/W
℃/W
℃/W
1
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
