UT4N60F
N-Ch 600V Fast Switching MOSFETs
General Description
The UT4N60F is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UT4N60F meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
600V
Applications
RD
S(ON)
2.2
Ω
ID
4A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
TO220F Pin Configuration
Absolute Maximum Ratings
G
D
S
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
Dv/Dt
P
D
T
J1
T
STG
T
L
Parameter
Drain-source Voltage
Drain current -Continuous (Tc=25℃)
-Continuous (Tc=100℃)
Drain current - pulsed
(Note1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note2)
Peak Diode Recovery Dv/Dt
(Note3)
Power Dissipation (Tc=25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum Lead temperature for soldering
purposes, 1/8" from case for seconds
TO220F
600
4
2.8
16
±30
8.8
4.5
33
0.26
-55-150
300
Unites
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
R
θJC
Thermal Resistance, Junction-to-case
R
θJA
Thermal Resistance, Junction-to-Ambient
1
Type
--
--
Max
3.8
6.5
Units
℃/W
℃/W
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
