DEVICE CHARACTERISTICS
1N4728A~1N4764A
1000
500
Z Z , DYNAMIC IMPEDANCE (OHMS)
V
Z
= 2.7 V
Z Z , DYNAMIC IMPEDANCE (OHMS)
T
J
= 25
°
C
i
Z
(rms) = 0.1
I
Z
(dc)
f = 60 Hz
1000
700
500
I
Z
= 1 mA
200
100
70
50
20
10
7
5
2
1
0.1
0.2
0.5
1
2
5
10
20
50
100
1
2
3
5
7
10
20
30
50
70 100
IZ, ZENER CURRENT (mA)
V
Z,
ZENER VOLTAGE (V)
5 mA
T
J
= 25
°
C
i
Z
(rms) = 0.1
I
Z
(dc)
f = 60 Hz
200
47 V
100
50
20
10
5
2
1
6.2 V
27 V
20 mA
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
10000
7000
5000
TYPICAL LEAKAGE CURRENT
2000
1000
700
500
200
100
70
50
I R , LEAKAGE CURRENT ( m A)
20
AT 80% OF NOMINAL
C, CAP ACIT ANCE (pF)
BREAKDOWN VOLTAGE
400
300
200
0 V BIAS
100
1 V BIAS
50
20
10
8
4
50% OF BREAKDOWN BIAS
10
7
5
1
2
5
10
20
50
100
V
Z
, NOMINAL V Z (VOLTS)
2
1
0.7
0.5
+125
°
C
I F , FOR WARD CURRENT (mA)
0.2
0.1
0.07
0.05
0.02
Figure 9. Typical Capacitance versus V
Z
1000
500
200
100
50
20
10
5 150
°
C
2
1
3
4
5
6
7
8
9
10
11
12
13
14
15
0.4
0.5
75
°
C
MINIMUM
MAXIMUM
0.01
0.007
0.005
+25
°
C
25
°
C
0
°
C
0.002
0.001
0.6
0.7
0.8
0.9
1
1.1
V
Z
, NOMINAL ZENER VOL
T
AGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 8. Typical Leakage Current
Figure 10. Typical Forward Characteristics
http://www.yeashin.com
6
REV.03 20121011
YEASHIN [ Yea Shin Technology Co., Ltd ]
