DATA SHEET
SEMICONDUCTOR
DB151 THRU DB157
DIP
Unit:inch(mm)
SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000
Volts CURRENT 1.5 Ampere
FEATURES
Good for automation insertion
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
High temperature soldering : 260
O
C / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.045(1.14)
.035(0.89)
.020
0.5
.135(3.4)
.115(2.9)
.255(6.5)
.245(6.2)
.335(8.51)
.320(8.12)
.060
(15)
.205(5.2)
.195(5.0)
.165(4.2)
.155(3.9)
.013(0.33)
.0088(0.22)
.350(8.9)
.300(7.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at TA =
40oC
Peak Forward Surge Current 8.3 ms single half
sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
DB151
50
35
50
DB152
100
70
100
DB153
200
140
200
DB154
400
280
400
1.5
DB155
600
420
600
DB156
800
560
800
DB157
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
IFSM
TJ,TSTG
60
-55 to + 150
Amps
℃
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per
Bridge
DC Blocking Voltage per element
@TA = 25oC
@TA = 125oC
IR
SYMBOL
VF
DB151
DB152
DB153
DB154
1.1
5
0.5
DB155
DB156
DB157
UNITS
Volts
uAmps
Amps
m
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1
REV.02 20120305
YEASHIN [ Yea Shin Technology Co., Ltd ]
