DATA SHEET
SEMICONDUCTOR
GBU10A THRU GBU10M
GBU
0.880 (22.3)
0.020 R (TYP.)
0.860 (21.8)
0.125 (3.2) x 45
o
10 Amp Single Phase Glass Passivated
Bridge Rectifiers 50 to 1000 Volts
FEATURES
•Plastic
Material has Underwriters Laboratory
•Glass
Passivated Chip junction
•High
Surge Overload Rating
•Reliable
Low Cost Construction Utilizing Molded Plastic Technique
•High
temperature soldering : 260 C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
O
0.085 (2.16)
0.065 (1.65)
0.310 (7.9)
0.290 (7.4)
Unit:inch(mm)
0.140 (3.56)
0.130 (3.30)
CHAMFER
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(1.9) R.
0.080 (2.03)
0.060 (1.52)
9
o
TYP.
5
o
TYP.
0.085 (2.16)
Maximum Ratings
•Operating
Temperature: -55℃ to +150℃
•Storage
Temperature: -55℃ to +150℃
•Typical
Thermal Resistance:2.2℃/W Junction to Case(Heatsink)
Maximum
MCC
Part Number
Recurrent
Peak Reverse
Voltage
GBU10A
GBU10B
GBU10D
GBU10G
GBU10J
GBU10K
GBU10M
50V
100V
200V
400V
600V
800V
1000V
35V
70V
140V
280V
420V
560V
700V
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
0.710 (18.0)
0.100 (2.54)
0.085 (2.16)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.075 (1.90)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
0.022 (0.56)
0.018 (0.46)
Dimensions in inches and (millimeters)
Electrical Characteristics @ 25℃ Unless Otherwise Specified
Maximum Average
Forward Current
(with heatsink Note1)
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
CJ
70pF
Measured at
1.0MHz,
VR=4.0V
I2t Rating for Fusing
I2t
200A2S t<8.3ms
IR
5.0uA
500uA
TA = 25℃
TA = 125℃
VF
1.1V
At 5.0/7.5/12.5/
17.5A DC
IFSM
200A
8.3ms, half sine
IF(AV)
10 A
TA = 100℃
Note:1.Device mounted on 100mm × 100mm × 1.6mm Cu Plate Heatsink
http://www.yeashin.com
1
REV.02 20120305
YEASHIN [ Yea Shin Technology Co., Ltd ]
