DATA SHEET
SEMICONDUCTOR
5.0AMP HIGH EFFICIENT RECTIFIERS
VOLTAGE RANGE: 50 TO 1000 VOLTS
FEATURES
. Low cost
. Diffused junction
. Low Leakage
. Low forward voltage
. High current capability
. Easily cleaned with Freon. Alcohol. Lsopropanol and similar
solvents
. The plastic material carries U/L recognition 94 V-O
HER501 THRU HER508
DO-201AD
Unit:inch(mm)
.210 (5.
3)
.188 (4.8)
DIA.
1.0 (25.4)
MIN.
.375 (9.5)
.
285
(7.2 )
MECHANICAL DATA
•
Case: Molded plastic , DO-201AD
•
Terminals: Plated axial leads, solderable per MIL-STD-202,
Method 208
•
Polarity: Color band denotes cathode
•
Mounting Position: Any
•
Weight: 0.04 ounce, 1.1 grams
.052 (1.3)
.048 (1.2)
DIA.
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase. half wave. 60HZ. resistive or inductive load. For capacitive load. derate current by 20%
SYMBOL HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current 9.5mm Lead Length. T
A
=55
°C
Peak Forward Surge Current
8.3ms Single Single half-sine-wave superimposed
on rated Tj=125
°C
Maximum Forward Voltage at 5.0A DC
Maximum Reverse Current T A = 25
°C
at Rated DC Blocking Voltage TA = 100
°C
Typical Junction Capacitance ( Note 1 )
Maximum reverse recovery time (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
300
210
300
5.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
C
j
Trr
T
j
T
STG
80
50
1.0
200
1.3
10.0
200.0
50
75
-
55 to 150
-
55 to 150
A
1.7
V
µA
pF
ns
°C
°C
NOTE:
1.
Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
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1
REV.02 20110725