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P11C68-35IG 参数 Datasheet PDF下载

P11C68-35IG图片预览
型号: P11C68-35IG
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS / SNOS NVSRAM高性能为8K ×8非易失性静态RAM [CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM]
分类和应用: 静态存储器
文件页数/大小: 17 页 / 156 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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P10C68/P11C68
STORE CYCLE 2 : E (BAR) CONTROLLED
(See note 13)
Symbol
Standard
t
ELQX1
t
NLEL
t
WLEL
t
ELNH
t
GHEL
Alternative
t
STORE
t
WC
Store cycle time
NE (bar) set-up to chip enable
Write enable wet-up to chip enable
Chip enable to NE (bar) rise
Output disable set-up to E (bar) fall
Parameter
P10C68-35
Min.
Max.
10
0
0
45
0
0
0
45
0
P10C68-45
Min.
Max.
10
ms
ns
ns
ns
ns
17
Units
Notes
18
NOTES
16. E (bar), G (bar), NE (bar) and W (bar) must make the transition between VIH(max) to VIL(max), or VIL(max) to VIH(min) in a
monotonic fashion.
17. Measured with W (bar) and NE (bar) both returned high, and G (bar) returned low. Note that store cycles are inhibited/aborted
by Vcc <3.3V (STORE inhibit).
18. Once twc has been satisfied by NE (bar), G (bar), W (bar) and E (bar) the store cycle is completed automatically, ignoring all
inputs. Any of NE (bar), G (bar), W (bar) or E (bar) may be used to terminate the store initiation cycle.
NE
G
t
GHNL
t
NLWL
t
WLNH
W
t
ELWL
E
t
WLQX
DQ
(DATA
OUT)
HIGH IMPEDANCE
Figure 9. STORE CYCLE 1: W (bar) controlled timing diagram (see note 16).
t
NLEL
NE
G
t
GHEL
t
WLEL
W
E
t
ELNH
t
ELQX1
DQ
(DATA
OUT)
HIGH IMPEDANCE
Figure 10. STORE CYCLE 2: E (bar) controlled timing diagram (see note 16).
9