NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* Gain of 20 at I
C
= 0.5 Amp
* P
tot
=1 Watt
2N6716
2N6717
2N6718
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
= 25°C
SYMBOL 2N6716
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
60
60
2N6717
80
80
5
2
1
1
E-Line
TO92 Compatible
2N6718
100
100
UNIT
V
V
V
A
A
W
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Collector Base
Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
f
T
C
CB
80
50
20
50
2N6716
60
60
5
1
1
0.5
0.35
1.2
250
500
30
80
50
20
50
2N6717
80
80
5
1
1
0.5
0.35
1.2
250
500
30
80
50
20
50
2N6718
100
100
5
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
MIN. MAX MIN. MAX MIN. MAX
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=1mA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=250mA, I
B
=10mA*
I
C
=250mA,I
B
=25mA*
IC=250mA, V
CE
=1V*
I
C
=50mA, V
CE
=1V*
I
C
=250mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
MHz I
C
=50mA, V
CE
=10V
pF
V
CE
=10V, f=1MHz
1
1
0.5
0.35
1.2
250
500
30
V
V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-6
ZETEX [ ZETEX SEMICONDUCTORS ]
