SOT23 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 3 - JULY 1995
1
7
1
BAS70-04
BAS70-05
BAS70-06
1
.
1
3
2
3
2
2
3
2
3
SOT23
SERIES PAIR
Device Type: BAS70-04
Partmarking Detail: 2Z
COMMON CATHODE
Device Type: BAS70-05
Partmarking Detail: 2Z5
COMMON ANODE
Device Type: BAS70-06
Partmarking Detail: 1Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Forward Current
Capacitance
Effective Minority Lifetime
(1)
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
SYMBOL
V
BR
I
R
V
F
I
F
C
T
τ
MIN.
70
MAX.
UNIT
V
CONDITIONS.
I
R
=10
µ
A
V
R
=50V
I
F
=1mA
V
F
=1V
f=1MHz, V
R
=0
f=54MHz, I
pk
= 20mA
(Krakauer Test Method)
200
410
15
2.0
100
nA
mV
mA
pF
ps
3-3
ZETEX [ ZETEX SEMICONDUCTORS ]
