SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
BC846AZ1A
BC846B1B
BC847AZ1E
BC847B1F
BC847C1GZ
BC848A1JZ
BC848B1K
BC848CZ1L
BC849B2B
BC849C2C
BC850B2FZ
BC850C-Z2G
COMPLEMENTARY TYPES
BC846
BC847
BC848
BC849
BC850
BC856
BC857
BC858
BC859
BC860
BC846
BC848
BC850
BC847
BC849
C
B
SOT23
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC846
BC847
BC848
BC849
BC850
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
=25°C
Operating and Storage
Temperature Range
PARAMETER
SYMBOL
Max
Collector Cut-Off Current I
CBO
Max
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
BM
I
EM
P
tot
T
j
:T
stg
80
80
65
6
50
50
45
30
30
30
100
200
200
200
330
-55 to +150
30
30
30
5
50
50
45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BC846
BC847 BC848 BC849 BC850
15
5
90
250
200
600
300
600
700
900
580
660
700
770
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
Typ
Max.
Typ
Max.
Typ
Max.
V
BE(sat)
Typ
Typ
Base-Emitter Voltage
V
BE
Min
Typ
Max
Max
UNIT CONDITIONS.
nA
V
CB
= 30V
V
CB
= 30V
µ
A
T
amb
=150°C
mV I
C
=10mA,
mV I
B
=0.5mA
mV I
C
=100mA,
mV I
B
=5mA
mV I
C
=10mA*
mV
mV I
C
=10mA,
I
B
=0.5mA
mV I
C
=100mA,
I
B
=5mA
mV I
C
=2mA
mV V
CE
=5V
mV
mV
I
C
=10mA
V
CE
=5V
* Collector-Emitter Saturation Voltage at I
C
= 10mA for the characteristics going through the
operating point I
C
= 11mA, V
CE
= 1V at constant base current.
ZETEX [ ZETEX SEMICONDUCTORS ]
