SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
BCV49
EE
7
BCV48
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-80
-60
-10
-800
-500
1
-65 to +150
UNIT
V
V
V
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-80
-60
-10
-100
-10
-100
-1
-1.5
2000
4000
10000
2000
200
4.5
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
µA
nA
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-10µA
V
CB
=-60V
V
CB
=-60V, T
amb
=150°C
V
EB
=-4V
I
C
=-100mA, I
B
-0.1mA*
I
C
=-100mA, I
B
=-0.1mA*
I
C
=-100µA, V
CE
=-1V†
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-50mA, V
CE
=-5V
f = 20MHz
V
CB
=-10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
† Periodic Sample Test Only.
3 - 25
ZETEX [ ZETEX SEMICONDUCTORS ]
