SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
7
BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
BCX53
– AH
BCX53-10 – AK
BCX53-16 – AL
BCX51
BCX52
BCX53
C
PARTMARKING DETAILS –
BCX51
– AA
BCX51-10 – AC
BCX51-16 – AD
BCX52
– AE
BCX52-10 – AG
BCX52-16 – AM
E
C
B
SOT89
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
BCX51
-45
-45
BCX52
-60
-60
-5
-1.5
-1
1
-65 to +150
BCX53
-100
-80
UNIT
V
V
V
A
A
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
BCX53
BCX52
BCX51
SYMBOL
V
(BR)CBO
MIN.
-100
-60
-45
-80
-60
-45
-5
-0.1
-20
-20
-0.5
-1.0
25
40
25
63
100
150
25
TYP.
MAX. UNIT CONDITIONS.
V
V
V
V
I
C
=-100µA
I
C
=-100µA
I
C
=-100µA
I
C
=-10mA*
I
C
=-10mA*
I
C
=-10mA*
I
E
=-10µA
V
CB
=-30V
V
CB
=-30V, T
amb
=150°C
V
EB
=-4V
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-2V*
I
C
I
C
I
C
I
C
I
C
MHz
pF
=-5mA, V
CE
=-2V*
=-150mA, V
CE
=-2V*
=-500mA, V
CE
=-2V*
=-150mA, V
CE
=-2V*
=-150mA, V
CE
=-2V*
Collector-Emitter BCX53
Breakdown
BCX52
Voltage
BCX51
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
-10
-16
V
µA
µA
nA
V
V
250
160
250
Transition Frequency
Output Capacitance
f
T
C
obo
I
C
=-50mA, V
CE
=-10V,
f=100MHz
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
3 - 34
ZETEX [ ZETEX SEMICONDUCTORS ]
