SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001
BCX5616
C
COMPLEMENTARY TYPE – BCX5316
PARTMARKING DETAIL – BL
C
B
SOT89
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
100
80
5
2
1
1
-65 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
25
100
25
150
15
MIN.
100
80
5
0.1
20
20
0.5
1.0
TYP.
MAX. UNIT CONDITIONS.
V
V
V
IC =100
µ
A
IC =10mA
I
E
=10
µ
A
V
CB
=30V
V
CB
=30V, T
amb
=150°C
V
EB
=4V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=5mA, V
CE
=2V*
I
C
=150mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
MHz
pF
I
C
=50mA, V
CE
=10V,
f=100MHz
V
CB
=10V, f=1MHz
µ
A
µ
A
nA
V
V
250
f
T
C
obo
*Measured under pulsed conditions.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
