SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1995
7
FEATURES
* High gain and low saturation voltages
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
BCX68
BCX69
– CJ
BCX69-16 – CG
BCX69-25 – CH
BCX69
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-25
-20
-5
-2
-1
1
-65 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
50
85
60
BCX69-16 100
BCX69-25 160
f
T
C
obo
100
25
h
FE
MIN.
-25
-20
-5
-0.1
-10
-10
-0.5
-1.0
TYP.
MAX. UNIT
V
V
V
µA
µA
µA
V
V
CONDITIONS.
IC =-100µA
IC =-10mA
I
E
=-100µA
V
CB
=-25V
V
CB
=-25V, T
amb
=150°C
V
EB
=-5V
I
C
=-1A, I
B
=-100mA
I
C
=-1A, V
CE
=-1V
I
C
I
C
I
C
I
C
I
C
MHz
pF
=-5mA, V
CE
=-1V
=-500mA, V
CE
=-1V
=-1A, V
CE
=-1V*
=-500mA, V
CE
=-1V*
=-500mA, V
CE
=-1V
375
250
250
400
Transition Frequency
Output Capacitance
I
C
=-100mA, V
CE
=-5V,
f=100MHz
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMT549 datasheet.
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