SOT23 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 3 JANUARY 1996
PARTMARKING DETAIL G1
C
7
BFS20
E
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
30
20
4
25
25
330
-55 to +150
SOT23
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector Cut-Off
Current
Base-Emitter Voltage
SYMBOL
I
CBO
MIN.
TYP.
MAX.
100
10
740
40
275
85
450
0.35
0.8
0.40
MHz
pF
pF
900
UNIT
µ
A
CONDITIONS.
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0,
T
amb
=100°C
I
C
=7mA, V
CE
=10V*
I
C
=7mA, V
CE
=10V*
I
C
=5mA, V
CE
=10V
f=100MHz
I
C
=1mA, V
CE
=10V
f=1MHz
I
E
=I
e
=0, V
CB
=10V
f=1MHz
nA
V
BE
mV
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Feedback Capacitance
Collector Capacitance
f
T
C
re
C
TC
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 53
ZETEX [ ZETEX SEMICONDUCTORS ]
