SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001
COMPLEMENTARY TYPE
–
✪
BSP33
BSP43
C
PARTMARKING DETAIL
– BSP43
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
TOT
T
j
:T
stg
VALUE
90
80
5
2
1
100
2
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Output Capacitance
Input Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
30
100
50
MIN.
90
80
5
100
50
0.25
0.5
1.0
1.2
300
12
90
100
250
1000
pF
pF
MHz
ns
ns
MAX.
UNIT
V
V
V
nA
µ
A
V
V
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA
I
E
=10
µ
A
V
CB
=60V
V
CB
=60V, T
amb
=125°C
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=100
µ
A, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=500mA, V
CE
=5V
V
CB
=10V, f=1MHz
V
EB
=0.5V, f=1MHz
I
C
=50mA, V
CE
=10V
f =35MHz
V
CC
=20V, I
C
=100mA
I
B1
=I
B2
=5mA
*
C
obo
C
ibo
f
T
T
on
T
off
*Measured under pulsed conditions.
For typical characteristics graphs see FMMT493 datasheet.
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
