SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996
PARTMARKING DETAIL
7
– SS
BSS138
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
50
200
800
±
20
360
-55 to +150
SOT23
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
50
0.5
1.5
100
0.5
5
100
3.5
120
50
25
8
10
10
15
25
MIN.
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
nA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈30V,
I
D
=280mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=0.25mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=50V, V
GS
=0
V
DS
=50V, V
GS
=0V, T=125°C
(2)
V
DS
=20V, V
GS
=0
V
GS
=5V,I
D
=200mA
V
DS
=25V,I
D
=200mA
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 72
ZETEX [ ZETEX SEMICONDUCTORS ]
